Samsung is reportedly on a mission to overhaul its 6th-generation 1c DRAM design in an effort to boost yield rates and prepare for its upcoming HBM4 process.
The Crucial Role of Samsung’s 1c DRAM in its HBM4 Journey
It seems the Korean tech giant is seriously rethinking its approach to the 1c DRAM process—an integral component for the success of its HBM4 process. A piece from ZDNet Korea reveals that Samsung has been re-evaluating its DRAM designs since the second half of 2024. This revamp is crucial as the 1c DRAM is intended to smooth the path for Samsung’s future HBM processes, aiming for broader industry adoption, unlike the challenges faced with its HBM3 versions that struggled to gain traction with key players like NVIDIA.
The buzz around the new design emerged because Samsung’s advanced DRAM process wasn’t hitting the desired yield rates, which are pegged at approximately 60% to 70%. As a result, mass production couldn’t kick off. The sticking point? The size of the 1c DRAM chip. Initially, Samsung’s strategy involved minimizing the chip size to ramp up production, but this compromised process stability, driving yield rates down.
In response, Samsung has updated the design of its 1c DRAM to make the chip larger, focusing on improving yields with an eye on mid-year targets. The aim is to achieve stable mass production of their next-gen memory, even at higher costs. As ZDNet Korea reports, the stakes are high.
The 1c DRAM process is pivotal for Samsung’s HBM4 line-up, and with competitors like SK Hynix and Micron already advancing their designs, the clock is ticking for Samsung. Considering its less-than-stellar reputation following the HBM3 issues, Samsung is under pressure to meet industry standards with its 1c DRAM process.
At present, it’s uncertain how Samsung’s 6th-generation DRAM process will evolve. However, there’s hope that developments in the coming months could set Samsung’s HBM4 process on the right path for mass production later this year.
